LX803 transistor equivalent, silicon gate enhancement mode rf power ldmos transistor.
low feedback and output capacitances HIGH EFFICIENCY, LINEAR, resulting in high Ft transistors with HIGH GAIN, LOW NOISE high input impedance and high efficiency. o ABSOL.
RF POWER LDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 45 Watts Single Ended Statio.
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