P121 transistor equivalent, patented gold metallized silicon gate enhancement mode rf power vdmos transistor.
low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMEN.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 32.87KB)