patented gold metallized silicon gate enhancement mode rf power vdmos transistor.
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
P281
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE .
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and other.
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal f.
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