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Polyfet RF Devices

SP701 Datasheet Preview

SP701 Datasheet

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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polyfet rf devices
SP701
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
25.0 Watts Single Ended
Package Style AP
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
60 Watts
Junction to
Case Thermal
Resistance
o
2.80 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
3.5 A
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 25.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
10
55
dB Idq = 0.20 A, Vds = 28.0 V, F = 500MHz
% Idq = 0.20 A, Vds = 28.0 V, F = 500 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.20 A, Vds = 28.0 V, F = 500MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
65 V Ids = 20.00 mA, Vgs = 0V
1.0 mA
Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Current
1 uA
Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.10 A, Vgs = Vds
gM Forward Transconductance
1.2 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.85
Ohm
Vgs = 20V, Ids = 2.50 A
Idsat
Saturation Current
7.00 Amp Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
50.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
3.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
32.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 03/28/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com




Polyfet RF Devices

SP701 Datasheet Preview

SP701 Datasheet

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

No Preview Available !

SP701
POUT VS PIN GRAPH
SP701 POUT VS PIN Freq=500MHz, VDS=28V, Idq=.2A
30 13.00
25 12.00
Pout
20 11.00
15 10.00
Gain
10 9.00
Efficiency = 55%
5
8.00
0 7.00
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
PIN IN WATTS
IV CURVE
S1A 1 DIE IV
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
vg=2v Vg=4v VVg=D6SvINVOLTS vg=8v 0 vg=12v
Zin Zout
100
10
1
0
10.00
1.00
0.10
0
CAPACITANCE VS VOLTAGE
S1A 1 DIE CAPACITANCE
Ciss
Coss
Crss
5 10 15 20
VDS IN VOLTS
ID & GM VS VGS
S1A 1 DIE ID & GM Vs VG
25
Id
30
gM
2 4 6 8 10 12
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
14
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 03/28/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


Part Number SP701
Description SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices
Total Page 2 Pages
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