PDP0902 mosfets equivalent, n-channel mosfets.
* 100V,80A, RDS(ON) =13mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* Net.
TO220 Pin Configuration
D
GDS
G
S
BVDSS 100V
RDSON 13m
ID 80A
Features
* 100V,80A, RDS(ON) =13mΩ@VGS = 10.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
Image gallery
Download