PDP6976-5 mosfet equivalent, n-channel mosfet.
* 65V,115A, RDS(ON) =4.7mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* Ne.
TO220 Pin Configuration
D
GDS
G
S
BVDSS 65V
RDSON 4.7m
ID 115A
Features
* 65V,115A, RDS(ON) =4.7mΩ@VGS = .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
Image gallery
Download