PDQ0854-R mosfets equivalent, dual n-channel mosfets.
* 100V,1.5A, RDS(ON) =330mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available
SOT23-6-R Pin Configuration D1
D1 S2 D2
G1.
BVDSS 100V
RDSON 330m
ID 1.5A
Features
* 100V,1.5A, RDS(ON) =330mΩ @VGS = 10V
* Improved dv/dt capability .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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