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PDQ2307 Datasheet Preview

PDQ2307 Datasheet

20V P-Channel MOSFETs

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20V P-Channel MOSFETs
PDQ2307
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
SOT23-6 Pin Configuration
DDS
G
D
D
G
D
S
S
BVDSS
-20V
RDSON
26m
ID
-6.5A
Features
-20V,-6.5A,RDS(ON) =26mΩ@VGS=-4.5V
Improved dv/dt capability
Fast switching
Green Device Available
Suit for -1.8V Gate Drive Applications
Applications
Notebook
Load Switch
Networking
Absolute Maximum Ratings Tc=25unless otherwise noted
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (TC=25)
Drain Current – Continuous (TC=100)
Drain Current – Pulsed1
Power Dissipation (TC=25)
Power Dissipation – Derate above 25
Storage Temperature Range
Operating Junction Temperature Range
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance Junction to ambient
Rating
-20
±10
-6.5
-4.1
-26
1.56
0.012
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Typ.
---
Max.
80
Unit
/W
Potens semiconductor corp.
1
Ver.1.00




Potens semiconductor

PDQ2307 Datasheet Preview

PDQ2307 Datasheet

20V P-Channel MOSFETs

No Preview Available !

20V P-Channel MOSFETs
PDQ2307
Electrical Characteristics (TJ=25 , unless otherwise noted)
Off Characteristics
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Conditions
VGS=0V , ID=-250uA
Reference to 25, ID=-1mA
VDS=-20V , VGS=0V , TJ=25
VDS=-16V , VGS=0V , TJ=125
VGS=±10V , VDS=0V
Min.
-20
---
---
---
---
Typ.
---
-0.01
---
---
---
Max.
---
---
-1
-10
±100
Unit
V
V/
uA
uA
nA
On Characteristics
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
VGS(th)
gfs
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Forward Transconductance
VGS=-4.5V , ID=-5A
VGS=-2.5V , ID=-4A
VGS=-1.8V , ID=-3A
VGS=VDS , ID =-250uA
VDS=-10V , IS=-5A
--- 21 26
--- 26 32 m
--- 32 40
-0.3 -0.6 -1.0
V
--- 3 --- mV/
--- 15 ---
S
Dynamic and switching Characteristics
Qg Total Gate Charge2 , 3
Qgs Gate-Source Charge2 , 3
VDS=-10V , VGS=-4.5V , ID=-5A
Qgd Gate-Drain Charge2 , 3
Td(on)
Turn-On Delay Time2 , 3
Tr Rise Time2 , 3
VDD=-10V , VGS=-4.5V , RG=25
Td(off)
Turn-Off Delay Time2 , 3
ID=-1A
Tf Fall Time2 , 3
Ciss Input Capacitance
Coss Output Capacitance
VDS=-15V , VGS=0V , F=1MHz
Crss Reverse Transfer Capacitance
---
---
---
---
---
---
---
---
---
---
19.5
2
3.6
10.4
37.5
89.1
24.6
1670
220
120
29
4
7
20
71
129
47
2430
320
180
nC
nS
pF
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width 300us , duty cycle 2%.
3. Essentially independent of operating temperature.
Min.
---
---
---
Typ.
---
---
---
Max.
-6.5
-26
-1
Unit
A
A
V
Potens semiconductor corp.
2
Ver.1.00


Part Number PDQ2307
Description 20V P-Channel MOSFETs
Maker Potens semiconductor
Total Page 5 Pages
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