PJX17N80T Datasheet N-Channel MOSFETS

Manufacturer: Potens semiconductor

PJX17N80T n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PJX17N80T
Manufacturer	Potens semiconductor
File Size	821.54 KB
Description	N-Channel MOSFETS
Download	PJX17N80T Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

800V N-Channel MOSFETs PJX17N80T General.

Key Features

800V,17A, RDS(ON) =0.35Ω@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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