PJX30N65T Datasheet | Potens semiconductor

Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply TO247 Pin Configuration BVDSS 650V RDSON 0.14 ID 30A Features - 30A,650V, RDS(ON) =0.14Ω@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available App- lic Haigthioenffiscient switched mode power supplies - LED Lighting - Adapter/charger DS G Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol VDS VGS IDM EAS IAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous...