PJX30N65T Description
These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply TO247 D BVDSS 650V RDSON 0.14 ID 30A.
PJX30N65T Key Features
- 30A,650V, RDS(ON) =0.14Ω@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
- LED Lighting
- Adapter/charger