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PJX53N65D - N-Channel MOSFETS

Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 53A,650V, RDS(ON) =69mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PJX53N65D

Datasheet Details

Part number PJX53N65D
Manufacturer Potens semiconductor
File Size 462.73 KB
Description N-Channel MOSFETS
Datasheet download datasheet PJX53N65D Datasheet
Additional preview pages of the PJX53N65D datasheet.

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Full PDF Text Transcription

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650V N-Channel MOSFETS PJX53N65D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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