PJX53N65D - N-Channel MOSFETS

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

53A,650V, RDS(ON) =69mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PJX53N65D n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PJX53N65D
Manufacturer	Potens semiconductor
File Size	462.73 KB
Description	N-Channel MOSFETS
Datasheet	PJX53N65D Datasheet

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650V N-Channel MOSFETS PJX53N65D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.