PJX60N60T Datasheet | Potens semiconductor

Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. TO247 Pin Configuration D BVDSS RDSON 600V 65m 60A Features - 600V,60A, RDS(ON) =65mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - High efficient switched mode power supplies - LED Lighting - Adapter/charger Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS IDM EAS IAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃) Drain Current - Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25℃) Power Dissipation - Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Rating 600 ±30 60 38 240 1800 10 312 2.5 -50 to 150 -50 to 150 Units V V A A A m J A W W/℃ ℃ ℃ Thermal Characteristics Symbol RθJA RθJC Parameter Thermal Resistance Junction to ambient Thermal Resistance Junction to...