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PJX60N60T - N-Channel MOSFETS

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 600V,60A, RDS(ON) =65mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PJX60N60T

Datasheet Details

Part number PJX60N60T
Manufacturer Potens semiconductor
File Size 721.47 KB
Description N-Channel MOSFETS
Datasheet download datasheet PJX60N60T Datasheet
Additional preview pages of the PJX60N60T datasheet.

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Full PDF Text Transcription

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600V N-Channel MOSFETs PJX60N60T General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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