PJX17N80T - N-Channel MOSFETS

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

800V,17A, RDS(ON) =0.35Ω@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PJX17N80T n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PJX17N80T
Manufacturer	Potens semiconductor
File Size	821.54 KB
Description	N-Channel MOSFETS
Datasheet	PJX17N80T Datasheet

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800V N-Channel MOSFETs PJX17N80T General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO247 Pin Configuration D G BVDSS 800V RDSON 0.35 ID 17A Features  800V,17A, RDS(ON) =0.