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PJX17N80T - N-Channel MOSFETS

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 800V,17A, RDS(ON) =0.35Ω@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PJX17N80T

Datasheet Details

Part number PJX17N80T
Manufacturer Potens semiconductor
File Size 821.54 KB
Description N-Channel MOSFETS
Datasheet download datasheet PJX17N80T Datasheet
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Full PDF Text Transcription

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800V N-Channel MOSFETs PJX17N80T General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO247 Pin Configuration D G BVDSS 800V RDSON 0.35 ID 17A Features  800V,17A, RDS(ON) =0.
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