Datasheet Details
| Part number | PJX53N65D |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 462.73 KB |
| Description | N-Channel MOSFETS |
| Download | PJX53N65D Download (PDF) |
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| Part number | PJX53N65D |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 462.73 KB |
| Description | N-Channel MOSFETS |
| Download | PJX53N65D Download (PDF) |
|
|
|
These N-Channel enhancement mode power field effect transistors are using Super Junction technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply TO247 Pin Configuration D S D G G S BVDSS 650V RDSON 69m ID 53A
650V N-Channel MOSFETS PJX53N65D General.
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