Datasheet4U Logo Datasheet4U.com

PJX60N60T Datasheet N-Channel MOSFETS

Manufacturer: Potens semiconductor

Datasheet Details

Part number PJX60N60T
Manufacturer Potens semiconductor
File Size 721.47 KB
Description N-Channel MOSFETS
Download PJX60N60T Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

600V N-Channel MOSFETs PJX60N60T General.

Key Features

  • 600V,60A, RDS(ON) =65mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.