BULD25DR transistor equivalent, npn transistor.
3 Places
0,50 (0.020) x 45°NOM 0,25 (0.010)
5,21 (0.2.
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted)
RATING Collector-emitter voltage (V BE =.
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of E switching transistors has tightly controlled storage times and an integrated fast trr anti-parallel diode. The.
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