BULD1101E - High voltage fast-switching NPN Power Transistor
STMicroelectronics
General Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability.
Key Features
High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European Directive
3 1
DPAK TO-252 IPAK TO-251
1
2
3.
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www.DataSheet4U.com BULD1101E High voltage fast-switching NPN Power Transistor General features ■ ■ ■ ■ ■ High voltage capability Low spread of dynamic parameters Minimum...
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■ ■ ■ High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European Directive 3 1 DPAK TO-252 IPAK TO-251 1 2 3 Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for l
BULD1101E Datasheet
