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BULD118 - NPN Transistor

Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

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Datasheet preview – BULD118

Datasheet Details

Part number BULD118
Manufacturer STMicroelectronics
File Size 71.26 KB
Description NPN Transistor
Datasheet download datasheet BULD118 Datasheet
Additional preview pages of the BULD118 datasheet.

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Full PDF Text Transcription

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® BULD118D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 2 1 3 APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
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