BULD1101E Datasheet | STMicroelectronics

.. High voltage fast-switching NPN Power Transistor General Features - - - - - High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In pliance with the 2002/93/EC European Directive 3 1 DPAK TO-252 IPAK TO-251 Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection...