BULD116D Datasheet | STMicroelectronics

.. ® MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") 3 2 APPLICATIONS: s PACT FLUORESCENT LAMPS UP TO 23 W AT 110 V A.C. MAINS s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS AT 110 V A.C. MAINS DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. IPAK TO-251 ("Suffix "-1") INTERNAL SCHEMATIC...