Datasheet4U Logo Datasheet4U.com

BULD116D - MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

General Description

The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BULD125KC NPN Transistor Power Innovations Limited
BULD125KC NPN Transistor TRSYS
BULD25 NPN Transistor Power Innovations Limited
BULD25D NPN Transistor Power Innovations Limited
BULD25DR NPN Transistor Power Innovations Limited

Other Datasheets by STMicroelectronics

Part Number Description
BULD1101E High voltage fast-switching NPN Power Transistor
BULD1101ET4 High voltage fast-switching NPN Power Transistor
BULD118 NPN Transistor
BULD118D-1 NPN Transistor
BULD741 High voltage fast-switching NPN power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com ® BULD116D MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") 1 3 2 APPLICATIONS: s COMPACT FLUORESCENT LAMPS UP TO 23 W AT 110 V A.C. MAINS s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS AT 110 V A.C. MAINS DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.