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BULD1101ET4 - High voltage fast-switching NPN Power Transistor

This page provides the datasheet information for the BULD1101ET4, a member of the BULD1101E High voltage fast-switching NPN Power Transistor family.

Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability.

Features

  • High voltage capability.
  • Low spread of dynamic parameters.
  • Minimum lot-to-lot spread for reliable operation.
  • Very high switching speed.
  • In compliance with the 2002/93/EC European Directive.

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Datasheet preview – BULD1101ET4

Datasheet Details

Part number BULD1101ET4
Manufacturer STMicroelectronics
File Size 292.13 KB
Description High voltage fast-switching NPN Power Transistor
Datasheet download datasheet BULD1101ET4 Datasheet
Additional preview pages of the BULD1101ET4 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com BULD1101E High voltage fast-switching NPN Power Transistor General features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ In compliance with the 2002/93/EC European Directive Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
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