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Power Innovations Limited

TIPL760A Datasheet Preview

TIPL760A Datasheet

NPN SILICON POWER TRANSISTORS

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Copyright © 1997, Power Innovations Limited, UK
TIPL760, TIPL760A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
q Rugged Triple-Diffused Planar Construction
q 4 A Continuous Collector Current
q Operating Characteristics Fully Guaranteed
at 100°C
q 1000 Volt Blocking Capability
q 75 W at 25°C Case Temperature
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp 10 ms, duty cycle 2%.
TIPL760
TIPL760A
TIPL760
TIPL760A
TIPL760
TIPL760A
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
Ptot
Tj
Tstg
VALUE
850
1000
850
1000
400
450
10
4
8
75
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1




Power Innovations Limited

TIPL760A Datasheet Preview

TIPL760A Datasheet

NPN SILICON POWER TRANSISTORS

No Preview Available !

TIPL760, TIPL760A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
VCEO(sus) sustaining voltage
IC = 10 mA L = 25 mH
(see Note 2)
TIPL760
TIPL760A
400
450
ICES
Collector-emitter
cut-off current
ICEO
IEBO
Collector cut-off
current
Emitter cut-off
current
VCE = 850 V
VCE = 1000 V
VCE = 850 V
VCE = 1000 V
VCE = 400 V
VCE = 450 V
VEB = 10 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IC = 0
TC = 100°C
TC = 100°C
TIPL760
TIPL760A
TIPL760
TIPL760A
TIPL760
TIPL760A
50
50
200
200
50
50
1
Forward current
hFE transfer ratio
VCE = 5 V IC = 0.5 A
(see Notes 3 and 4)
20 60
Collector-emitter
VCE(sat) saturation voltage
Base-emitter
VBE(sat) saturation voltage
Current gain
ft bandwidth product
IB = 0.5 A
IB = 0.8 A
IB = 0.8 A
IB = 0.5 A
IB = 0.8 A
IB = 0.8 A
VCE = 10 V
IC = 2.5 A
IC = 4 A
IC = 4 A
IC = 2.5 A
IC = 4 A
IC = 4 A
IC = 0.5 A
(see Notes 3 and 4)
TC = 100°C
(see Notes 3 and 4)
TC = 100°C
f = 1 MHz
1.0
2.5
5.0
1.2
1.4
1.3
12
Cob Output capacitance VCB = 20 V IE = 0
f = 0.1 MHz
110
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
µA
µA
mA
V
V
MHz
pF
thermal characteristics
RθJC
PARAMETER
Junction to case thermal resistance
MIN TYP MAX UNIT
1.56 °C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
tsv Voltage storage time
trv Voltage rise time
tfi Current fall time
tti Current tail time
IC = 4 A
VBE(off) = -5 V
txo Cross over time
tsv Voltage storage time
trv Voltage rise time
tfi Current fall time
tti Current tail time
IC = 4 A
VBE(off) = -5 V
txo Cross over time
IB(on) = 0.8 A
IB(on) = 0.8 A
TC = 100°C
(see Figures 1 and 2)
(see Figures 1 and 2)
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN
TYP
MAX
2.5
300
250
150
400
3
500
250
150
750
UNIT
µs
ns
ns
ns
ns
µs
ns
ns
ns
ns
PRODUCT INFORMATION
2


Part Number TIPL760A
Description NPN SILICON POWER TRANSISTORS
Maker Power Innovations Limited
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TIPL760A Datasheet PDF






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