logo

QIS0660001 Datasheet, Powerex Power Semiconductors

QIS0660001 Datasheet, Powerex Power Semiconductors

QIS0660001

datasheet Download (Size : 167.59KB)

QIS0660001 Datasheet

QIS0660001 volts)

single igbt h-series hermetic module (600 amperes/600 volts).

QIS0660001

datasheet Download (Size : 167.59KB)

QIS0660001 Datasheet

QIS0660001 Features and benefits

QIS0660001 Features and benefits


* Low Drive Power
* Low VCE(sat)
* Discrete Super-Fast Recovery (70ns) Free-Wheel Diode
* High Frequency Operation (2025kHz)
* Isolated Base plate fo.

QIS0660001 Application

QIS0660001 Application

Each Module consists of two IGBT transistors in a half bridge configuration with each transistor having a reverse conne.

QIS0660001 Description

QIS0660001 Description

Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of two IGBT transistors in a half bridge configuration with each transistor having a reverse connected super fast recovery free wheel diode. All compo.

Image gallery

QIS0660001 Page 1 QIS0660001 Page 2 QIS0660001 Page 3

TAGS

QIS0660001
Single
IGBT
H-Series
Hermetic
Module
600
Amperes
600
Volts
Powerex Power Semiconductors

Manufacturer


Powerex Power Semiconductors

Related datasheet

QIS1260015

QIS1760002

QIS1790001

QIS4506001

QIC0610001

QIC0620001

QIC0620003

QIC1208001

QIC6508001

QID0630006

QID0640020

QID0660023

QID1210005

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts