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BT137S-600E 4Q Triac 18 July 2018 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a TO252 (DPAK) s

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IPD70R600P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

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SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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isc Thyristors INCHANGE Semiconductor BT137S-600E DESCRIPTION ·With TO-252( DPAK ) packaging ·Operating in 4 quadrants ·High commutation capability

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isc Triacs BTA16-600B FEATURES ·With TO-220AB insulated package ·Suitables for general purpose AC switching. Which can be used as an ON/OFF function

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AXS4054 600mA AXS4054 AXS4054 AXS4054/  ：600mA ，  0.5uA ，USB，  MOSFET、 ，。  ，  。 AXS40544.2V， 。 k 1/10，AXS4054。 ，AXS4054 eTe 05uA

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www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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isc Triacs BTA08-600B FEATURES ·With TO-220AB insulated package ·Suitables for general purpose applications where gate high sensitivity is required.

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Data Travo Flyback 6174Z-6005U Tampak Bawah Skema Koneksi No. Pin Fungsi 1 2 H B+120 Digunakan Pada TV : LG 34 5 67 14 -14 204 28 NC 8 ABL

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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600V High and Low Side Driver SLM2110 PRODUCT SUMMARY • VOFFSET • IO+/• VOUT • ton/off (typ.) • Delay Matching (typ.) 600 V max. 1 A / 1.6 A 10 V -

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MMD70R600P Datasheet MMD70R600P 700V 0.6Ω N-channel MOSFET  Description MMD70R600P is power MOSFET using magnachip’s advanced super junction technol

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16A TRIACS Product specification BTA16-600B GENERAL DESCRIPTION Available either in through-hole or surface-mount packages, the BTA16 - 600B triac s

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www.DataSheet4U.com ZXMS6001N3 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET Summary Continuous drain source voltage VDS = 60V On

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FET BIAS CONTROLLER DRAFT ISSUE A - DECEMBER 2000 DEVICE DESCRIPTION The ZNBR series of devices are designed to meet the bias requirements of GaAs and

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SW6008 5V/3.1A Type-C Solution Power Bank 5V/3.1A Type-C Solution Power Bank 1. General Description The SW6008 is a highly integrated power manageme

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ACT108W-600E www.DataSheet4U.com AC Thyristor power switch Rev. 02 — 26 May 2009 Product data sheet 1. Product profile 1.1 General description AC Th

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SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

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isc Triacs BTA41-600B FEATURES ·With TOP3 insulated package ·Suitable for general purpose where high surge current capability is required. Applicati

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