Datasheet Details
| Part number | PNMT3400 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 1.15 MB |
| Description | N-Channel MOSFET |
| Datasheet |
 PNMT3400 Datasheet
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| Part number | PNMT3400 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 1.15 MB |
| Description | N-Channel MOSFET |
| Datasheet |
PNMT3400 Datasheet
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Trench Power LV MOSFET technology High density cell design for low RDS(ON) High Speed switching MOSFET Product Summary VDS(V) 30 RDS(on)(mΩ) 28@VGS = 10V 33@VGS = 4.5V 52@VGS = 2.5V ID(A) 5.8 Applications Battery protection Load switch Power management PNMT3400 N-Channel MOSFET Top View Circuit Diagram 3400 Absolute maximum rating@25℃ Rating Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current1) TA=25℃ @ Steady State TA=70℃ @ Steady State Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient @ Steady State2) Junction and Storage Temperature Range Notes： 1) Pulse Test: Pulse Width≤300μs,Duty cycle ≤2%.
2) Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
Rev.06 1 Marking (Top View) Symbol VDS VGS ID IDM PD RθJA TJ,TSTG Value 30 ±12 5.8 4.6 23 1.2 104 -55~+150 Units V V A A W ℃/W ℃ www.prisemi.com N-Channel MOSFET PNMT3400 Electrical characteristics per line@25℃ (unless otherwise specified) Parameter Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage Maximum Body-Diode Continuous Current Dynamic Parameters Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Parameters Total Gate Charge Gate Source Charge Gate Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VSD IS Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tr Conditions VGS = 0V, ID = 250μA VDS = 30V,VGS = 0V VGS = ±12V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 2.0A VGS = 4.5V, ID = 2.0A VGS = 2.5V, ID = 2.0A IS = 5.8A,VGS = 0V VDS = 15V,VGS = 0V, f = 1MHz VGS = 4.5V,VDS = 15V, ID = 5.6A VGS = 4.5V,VDD = 10V, ID = 1A, RGEN = 2.8Ω Min.
Description Trench Power LV MOSFET technology High density cell design for low RDS(ON) High Speed switching MOSFET Product Summary VDS(V) 30 RDS(on)(mΩ) 28@VGS = 10V 33@VGS = 4.5V 52@VGS = 2.
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