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Description
The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness. Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage
MOSFET Product Summary
VDS(V) 20
RDS(on)(mΩ) 36@VGS=4.5V
ID(A) 2.0
PNMT20V2A N-Channel MOSFET
Top View
D G
Applications
Battery operated systems Solid-state relays Direct logic-level interface：TTL/CMOS
S
Circuit Diagram
D(3)
NT22A
Absolute maximum rating@25℃
Rating Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current Total Power Dissipation1) Junction and Storage Temperature Range
G(1)
S(2)
Marking (Top View)
Symbol VDS VGS ID IDM PD
TJ,TSTG
Value 20
±10 2.0 9.0 0.
PNMT20V2A Datasheet
