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Description
The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness. Trench Power LV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage
MOSFET Product Summary
VDS(V) 20
RDS(on)(mΩ) 50@VGS=4.5V
ID(A) 3.0
PNMT20V2SA N-Channel MOSFET
Top View
D G
Applications
Battery operated systems Solid-state relays Direct logic-level interface:TTL/CMOS
S
Circuit Diagram
D(3)
NT22S
Absolute maximum rating@25℃
Rating Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current Total Power Dissipation Junction and Storage Temperature Range
G(1)
S(2)
Marking (Top View)
Symbol VDS VGS ID IDM PD
TJ,TSTG
Value 20
±10 3.0 11.5 0.