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PNMT20V2SA - N-Channel MOSFET

General Description

The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.

Trench Power LV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage MOSFET Product Summary

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Datasheet Details

Part number PNMT20V2SA
Manufacturer Prisemi
File Size 396.01 KB
Description N-Channel MOSFET
Datasheet download datasheet PNMT20V2SA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.  Trench Power LV MOSFET technology  Voltage controlled small signal switch  Low input Capacitance  Fast Switching Speed  Low Input / Output Leakage MOSFET Product Summary VDS(V) 20 RDS(on)(mΩ) 50@VGS=4.5V ID(A) 3.0 PNMT20V2SA N-Channel MOSFET Top View D G Applications  Battery operated systems  Solid-state relays  Direct logic-level interface：TTL/CMOS S Circuit Diagram D(3) NT22S Absolute maximum rating@25℃ Rating Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current Total Power Dissipation Junction and Storage Temperature Range G(1) S(2) Marking (Top View) Symbol VDS VGS ID IDM PD TJ,TSTG Value 20 ±10 3.0 11.5 0.