PNMT20V6
PNMT20V6 is N-Channel MOSFET manufactured by Prisemi.
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
PNMT20V6 N-Channel MOSFET
D（3）
VDS(V) 20
MOSFET Product Summary
RDS(on)(Ω)
ID(A)
0.024@ VGS=4.5V
G（1）
S（2）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Body Leakage Current Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Delay Time Turn-Off Delay Time
Symbol
Conditions
OFF CHARACTERISTICS
BVDSS
ID =250μA,VGS=0V
IDSS
VDS =16V,VGS=0V
IGSS
VDS =0V,VGS=±8V
VGS(th)
VDS =VGS, ID...
