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Description
Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Speed switching
MOSFET Product Summary
VDS(V) -30
RDS(on)(mΩ) 70@VGS = -10V 100@VGS = -4.5V
ID(A) -3.0
Applications
Battery protection Load switch Power management
PPMT2307 P-Channel MOSFET
Top View
Circuit Diagram
2307
Absolute maximum rating@25℃
Rating
Drain-source Voltage
Gate-source Voltage
Drain Current @ TA = 25℃ Pulsed Drain Current1)
Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient @ Steady State2)
Junction and Storage Temperature Range
Notes： 1) Pulse Test: Pulse Width≤300μs,Duty cycle ≤2%. 2) Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
Rev.06
1
Marking (Top View)
Symbol
VDS VGS ID IDM PD RθJA TJ,TSTG
Value -30 ±20 -3.0 -15 1.
PPMT2307 Datasheet
