PPMT30V4 Description
The enhancement mode MOS is extremely high density cell and low on-resistance. Drain Current VGS=-2.5V VGS=-4.5V VGS=-10V 2 4 6 8 10 ID- Drain Current (A) Fig 4. Drain-Source On-Resistance .prisemi.
- Part: PPMT30V4
- Manufacturer: Prisemi
- Size: 256.09 KB
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