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PPMT30V4 - P-Channel MOSFET

General Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

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Datasheet Details

Part number PPMT30V4
Manufacturer Prisemi
File Size 256.09 KB
Description P-Channel MOSFET
Datasheet download datasheet PPMT30V4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PPMT30V4 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） VDS(V) -30 MOSFET Product Summary RDS(on)(mΩ) ID(A) 43 @ VGS=-10V -4.2 53@ VGS=-4.5V G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Trans conductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS BVDSS ID =-250μA,VGS=0V IDSS VDS =-24V,VGS=0V IGSS VDS =0V,VGS=±12V VGS(th) VDS =VGS, ID =-250μA VGS=-10V, ID =-4.2A RDS(ON) VGS=-4.5V, ID =-4A VGS=-2.