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QL65F7S-C Datasheet Laser Diode

Manufacturer: QSI

Overview: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :. Model : QL65F7S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65F7S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 1 JAN. 2004 ♦OVERVIEW QL65F7S-A/B/C is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10mW and low operating current for optoelectronic devices such as Optical Pick-up & Bar Code Reader.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • - Visible Light Output : λp = 650 nm - Optical Power Output : 10mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode.

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