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H11B815 Datasheet, OPTOCOUPLERS, QT Optoelectronics

H11B815 Datasheet, OPTOCOUPLERS, QT Optoelectronics

H11B815

datasheet Download (Size : 53.98KB)

H11B815 Datasheet
H11B815

datasheet Download (Size : 53.98KB)

H11B815 Datasheet

H11B815 Features and benefits

H11B815 Features and benefits


* Compact 4-pin package
* Current Transfer Ratio: 600% minimum (at IF = 1 mA)
* High isolation voltage between input and output (5300 VRMS)
* UL recognize.

H11B815 Application

H11B815 Application


* Power Supply Monitors
* Relay Contact Monitor
* Telephone/Telegraph Line Receiver
* Twisted Pair Line .

H11B815 Description

H11B815 Description

The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package. 4 FEATURES
* Compact 4-pin package
* Current Transfer Ratio: 600% minimum (at IF = 1 mA)
* .

Image gallery

H11B815 Page 1 H11B815 Page 2 H11B815 Page 3

TAGS

H11B815
4-PIN
PHOTODARLINGTON
OPTOCOUPLERS
QT Optoelectronics

Manufacturer


QT Optoelectronics

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