Datasheet Details
| Part number | H11B815 |
|---|---|
| Manufacturer | QT Optoelectronics |
| File Size | 53.98 KB |
| Description | 4-PIN PHOTODARLINGTON OPTOCOUPLERS |
| Datasheet |
 H11B815 Datasheet
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General Description
The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package.
Key Features
- Compact 4-pin package.
- Current Transfer Ratio: 600% minimum (at IF = 1 mA).
- High isolation voltage between input and output (5300 VRMS).
- UL recognized (File # E90700) 4 1 4 1.