HYI25D256160C sdram equivalent, 256-mbit double-data-rate sdram.
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* Auto Precharge option for each burst access Auto Refresh and Self Refresh Modes RAS-lockout supported tR.
DQS, as well as to both edges of CK. Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration o.
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