Datasheet Details
| Part number | HYB18T256161BF-25 |
|---|---|
| Manufacturer | Qimonda AG |
| File Size | 1.38 MB |
| Description | 256-Mbit x16 DDR2 SDRAM |
| Datasheet |
 HYB18T256161BF-25 Datasheet
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General Description
The 256-Mb DDR2 DRAM is a high-speed Double-Data-Rate-Two CMOS Synchronous DRAM device containing 268,435,456 bits and internally configured as a quad bank DRAM.
The 256-Mb device is organized as 4 Mbit × 16 I/O × 4 banks chip.
Key Features
- The 256-Mbit Double-Data-Rate-Two SDRAM offers the following key features:.
- Data masks (DM) for write data.
- 1.8 V ± 0.1V VDD for [.
- 20/.
- 25/.
- 28].
- 1.8 V ± 0.1V VDDQ for [.
- 20/.
- 25/.
- 28].
- Posted CAS by programmable additive latency for better.
- DRAM organizations with 16 data in/outputs command and data bus efficiency.
- Double Data Rate architecture:.
- Off-Chip-Driver impedance adjustment (OCD).