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UJ4C075044L8S - SiC FET

Datasheet Summary

Description

The UJ4C075044L8S is a 750V, 44mΩ G4 SiC FET.

It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Features

  • w On-resistance RDS(on): 44mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 89nC w Low body diode VFSD: 1.2V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 w TOLL package for faster switching, clean gate waveforms Typical.

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Datasheet Details

Part number UJ4C075044L8S
Manufacturer Qorvo
File Size 1.25 MB
Description SiC FET
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DATASHEET UJ4C075044L8S TAB TAB D 1 8 TAB 8 1 G (1) KS (2) S (3-8) Part Number UJ4C075044L8S Package MO-229 Marking UJ4C075044 750V-44mW SiC FET Rev. C, November 2023 Description The UJ4C075044L8S is a 750V, 44mΩ G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs.
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