UJ4C075044L8S - SiC FET
UJ4C075044L8S Features
* w On-resistance RDS(on): 44mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 89nC w Low body diode VFSD: 1.2V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM