SPA1526Z Datasheet 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

Manufacturer: RF Micro Devices (now Qorvo)

SPA1526Z 0.7ghz to 2.2ghz 2w ingap hbt amplifier by RF Micro Devices (now Qorvo) - Datasheet Preview

Datasheet Details

Part number	SPA1526Z
Manufacturer	RF Micro Devices (now Qorvo)
File Size	573.23 KB
Description	0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER
Download	SPA1526Z Download (PDF)

General Description

RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier.

The SPA1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment.

Overview

SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT SPA1526ZAmplifier 0.7GHz to 2.

Key Features

an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET.
InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS ACP versus Channel Power, Over Frequency, -35.0 WCDMA 880MHz -40.0 1960MHz 2140MHz -45.0 -50.0 -55.0 -60.0 -65.0 -70.0 -75.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 PO.

More Datasheets from RF Micro Devices (now Qorvo)

Part Number	Description
SPA-1426Z	0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER
SPA-1526Z	0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER