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RF Micro Devices

RF2117 Datasheet Preview

RF2117 Datasheet

HIGH EFFICIENCY 400Mhz AMPLIFIER

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Preliminary

RF2117
    
     
• 3.6V Analog Handsets
• Analog Communication Systems
• 400MHz Industrial Radios
• Portable Battery Powered Equipment
2
   
The RF2117 is a high power amplifier IC. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in analog cellu-
lar phone transmitters between 400MHz and 500MHz or
ISM applications operating at 433MHz. The device is
packaged in a low cost 16-lead plastic package with a
metal backside. The device is self-contained with the
exception of the output matching network and power sup-
ply feed line.
.393
.386
.244
.230
1
.021
.015
.050
.004
.000
.158
.152
.065
.055
8°MAX
5°MIN
.035 .0098
.016 .0075
Package Weight
typically 0.22 grams
EXPOSED
HEATSINK
.287
.271
.087
.071
       
Si BJT
GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
VREG 1
VCC1 2
LTUNE 3
Q1C 4
GND 5
RFIN 6
NC 7
VPD 8
Bias
Circuits
16 NC
15 NC
14 RFOUT
13 RFOUT
12 RFOUT
11 NC
10 NC
9 NC
      
     !"
 
• Single 3V to 5.5V Supply
• Up to 2W CW Output Power
• 33dB Small Signal Gain
• >50% Efficiency
• 400MHz to 500MHz Operation
    
RF2117
High Efficiency 400MHz Amplifier
RF2117 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A0 991201
2-47




RF Micro Devices

RF2117 Datasheet Preview

RF2117 Datasheet

HIGH EFFICIENCY 400Mhz AMPLIFIER

No Preview Available !

RF2117
Preliminary
Absolute Maximum Ratings
Parameter
Rating
Supply Voltage (VCC)
Power Down Voltage (VPD)
DC Supply Current
Input RF Power
2 Output Load
Operating Case Temperature
Operating Ambient Temperature
Storage Temperature
-0.5 to +6.0
-0.5 to +3.0
1300
+10
7:1
-40 to +100
-40 to +85
-55 to +150
Unit
VDC
V
mA
dBm
°C
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
Frequency Range
Maximum CW Output Power
Total CW Efficiency
Small-signal Gain
Harmonics
All Other Spurious
Input VSWR
Input Power
Input Impedance
Noise Power in Rx Band
Intermodulation Conversion at
TX Freq. - 10MHz
Power Down Isolation
Power Control
Control Voltage VPD
Control Current
Gain Control
Power Supply
Power Supply Voltage
Power Supply Current
Regulated Voltage VREG
Current from VREG
Specification
Min. Typ. Max.
+32.5
+31.5
52
-30
+2
400 to 500
+33
55
45
33
-40
<2:1
+4
50
-70
+6
-80dBm
12
45
0 2.4
6
35
3.0 3.6 5.3
1100
2.7 2.8 2.9
12
Unit
MHz
dBm
dBm
dBm
%
%
dB
dBc
dBc
dBm
dBm
dB
dB
V
mA
dB
V
mA
V
mA
Condition
T=25 °C, VCC=3.6V, VPD=2.2V,
ZLOAD=2.7, PIN=4dBm, Freq=450MHz
VCC=3.2 to 4.5V Tamb=-25 to +85 °C
VCC=3.0 to 3.2V and 4.5 to 5.5V
Vcc=3.0V Pout=+32.5 dBm
Vcc=3.6V Pout=+32.5 dBm
Vcc=3.0 to 5.5V
Tamb= -25 to +85 °C
Load VSWR6:1 all phase angles, Zs=50 ,
Vcc=3.0V to 5.5V, Tamb= -30 to +85° C
Pout=+32.5 dBm, Freq.= 410 to 485 MHz,
Tamb= -30 to +85°C VSWR 6:1 all phase
angles.
Pout=+15dBm to +32.5 dBm
VPD grounded through 1kresistor
Pin=+6dBm
DC Current at POUT,MAX
2-48
Rev A0 991201


Part Number RF2117
Description HIGH EFFICIENCY 400Mhz AMPLIFIER
Maker RF Micro Devices
Total Page 7 Pages
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