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RF2103P - MEDIUM POWER LINEAR AMPLIFIER

General Description

The RF2103P is a medium power linear amplifier IC.

The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and 1000MHz.

Key Features

  • 450MHz to 1000MHz Operation.
  • Up to 750mW CW Output Power.
  • 31dB Small Signal Gain.
  • Single 2.7V to 7.5V Supply.
  • 47% Efficiency.
  • Digitally Controlled Power Down Mode RF IN 1 GND 2 GND 3 PD 4 VCC1 5 VCC2 6 PRE AMP PWR 7 PRE AMP FPA 14 RF OUT 13 RF OUT 12 GND 11 GND 10 GND 9 RF OUT 8 RF OUT BIAS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF2103P 2 Typical Applications • Digital Communication Systems • Portable Battery-Powered Equipment • Spread-Spectrum Communication Systems • Commercial and Consumer Systems • Driver for Higher Power Linear Applications • Base Station Equipment MEDIUM POWER LINEAR AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and 1000MHz. It may also be used as a driver amplifier in higher power applications.