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RF2103P - MEDIUM POWER LINEAR AMPLIFIER

Datasheet Summary

Description

The RF2103P is a medium power linear amplifier IC.

The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and 1000MHz.

Features

  • 450MHz to 1000MHz Operation.
  • Up to 750mW CW Output Power.
  • 31dB Small Signal Gain.
  • Single 2.7V to 7.5V Supply.
  • 47% Efficiency.
  • Digitally Controlled Power Down Mode RF IN 1 GND 2 GND 3 PD 4 VCC1 5 VCC2 6 PRE AMP PWR 7 PRE AMP FPA 14 RF OUT 13 RF OUT 12 GND 11 GND 10 GND 9 RF OUT 8 RF OUT BIAS.

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Datasheet preview – RF2103P

Datasheet Details

Part number RF2103P
Manufacturer RF Micro Devices
File Size 191.87 KB
Description MEDIUM POWER LINEAR AMPLIFIER
Datasheet download datasheet RF2103P Datasheet
Additional preview pages of the RF2103P datasheet.

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Full PDF Text Transcription

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RF2103P 2 Typical Applications • Digital Communication Systems • Portable Battery-Powered Equipment • Spread-Spectrum Communication Systems • Commercial and Consumer Systems • Driver for Higher Power Linear Applications • Base Station Equipment MEDIUM POWER LINEAR AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and 1000MHz. It may also be used as a driver amplifier in higher power applications.
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