RF3374 Datasheet | RF Micro Devices

Description The RF3374 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data munication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 Ω input and output impedances and requires only two external DC-biasing elements to operate as specified. 1.04 0.80 0.50 0.30 1.60 1.40 GENERAL PURPOSE AMPLIFIER - Driver Stage for Power Amplifiers - Final PA for Low-Power Applications - High Reliability Applications 3.10 2.90 0.48 0.36 2 PL 4.60 4.40 2.60 2.40 Shaded lead is pin 1. Dimensions in mm. 1.80 1.45 1.75 1.40 0.43 0.38 0.53 0.41 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS In Ga P/HBT Package Style: SOT89 Ga As HBT Si Ge HBT Ga N HEMT Ga As MESFET Si CMOS Si Ge Bi-CMOS Features - DC to >6000MHz Operation - Internally Matched Input and Output - 20d B Small Signal Gain - +32d Bm Output IP3 - +18d Bm Output Power 1 RF IN GND 4 2 GND 3 RF OUT Ordering Information RF3374 General Purpose Amplifier RF3374PCBA-410 Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://.rfmd. Rev A7 050310 4-583 Absolute Maximum Ratings Parameter Input RF Power Operating Ambient Temperature Storage Temperature Rating +13 -40 to +85 -60 to...