RFHA1003
RFHA1003 is 9W GaN WIDEBAND manufactured by RF Micro Devices.
RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier
30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
Features
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VGS Pin 1
Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 512MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 19dB
- Power Added Efficiency 70% -40°C to 85°C Operating Temperature
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RF IN Pin 2,3
RF OUT / VDS Pin 6,7
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GND BASE
Functional Block Diagram
- Product Description
The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR,...
