RFHA1006
RFHA1006 is 9W GaN WIDEBAND POWER AMPLIFIER manufactured by RF Micro Devices.
RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier
225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
Features
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VGS Pin 1
Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 225MHz to 1215MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 16dB
- Power Added Efficiency 60% -40°C to 85°C Operating Temperature
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RF IN Pin 2,3
RF OUT / VDS Pin 6,7
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GND BASE
Functional Block Diagram
- Product Description
The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure,...
