RFHA1006 - 9W GaN WIDEBAND POWER AMPLIFIER

Product Overview

RF Micro Devices

Datasheet Details

Part number	RFHA1006
Manufacturer	RF Micro Devices
File Size	1.66 MB
Description	9W GaN WIDEBAND POWER AMPLIFIER
Datasheet	RFHA1006 Datasheet
Additional preview pages of the RFHA1006 datasheet.

Product details

Description

The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.

Features

VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 225MHz to 1215MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 16dB.
Power Added Efficiency 60% -40°C to 85°C Operating Temperature.
RF IN Pin 2,3 RF OUT / VDS Pin 6,7.
GND BASE Functional Block Diagram.
Product.

📁 Similar Datasheet

RFHA1025 - 280W GaN WIDEBAND PULSED POWER AMPLIFIER (RFMD)
RFH10N45 - N-Channel Power MOSFET (Intersil Corporation)
RFH10N50 - N-Channel Power MOSFET (Intersil Corporation)
RFH12N35 - N-Channel Power MOSFET (Intersil Corporation)
RFH12N40 - N-Channel Power MOSFET (Intersil Corporation)
RFH25P08 - P-Channel Power MOSFET (Intersil Corporation)
RFH25P08 - P-Channel Power MOSFETs (Harris)
RFH25P10 - P-Channel Power MOSFET (Intersil Corporation)

Other Datasheets by RF Micro Devices

RFHA1000 - 15W GaN WIDE-BAND POWER AMPLIFIER
RFHA1003 - 9W GaN WIDEBAND
RFHA1020 - 280W GaN WIDE-BAND PULSED POWER AMPLIFIER
RFHA1023 - 225W GaN WIDE-BAND PULSED POWER AMPLIFIER

Published: Jun 14, 2012 |