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RFHA1006 Datasheet 9w Gan Wideband Power Amplifier

Manufacturer: RF Micro Devices (now Qorvo)

Overview: RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier RFHA1006 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier /.

General Description

The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.

Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design.

The RFHA1006 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies.

Key Features

  • VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 225MHz to 1215MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 16dB.
  • Power Added Efficiency 60% -40°C to 85°C Operating Temperature.
  • RF IN Pin 2,3 RF OUT / VDS Pin 6,7.
  • GND BASE Functional Block Diagram.
  • Product.

More Datasheets from RF Micro Devices (now Qorvo)

Part Number Description
RFHA1000 15W GaN WIDE-BAND POWER AMPLIFIER
RFHA1003 9W GaN WIDEBAND
RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER
RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER

RFHA1006 Distributor