RFHA1003 - 9W GaN WIDEBAND

Product Overview

RF Micro Devices

Datasheet Details

Part number	RFHA1003
Manufacturer	RF Micro Devices
File Size	1.12 MB
Description	9W GaN WIDEBAND
Datasheet	RFHA1003 Datasheet
Additional preview pages of the RFHA1003 datasheet.

Product details

Description

The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.

Features

VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 512MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 19dB.
Power Added Efficiency 70% -40°C to 85°C Operating Temperature.
RF IN Pin 2,3 RF OUT / VDS Pin 6,7.
GND BASE Functional Block Diagram.
Product.

📁 Similar Datasheet

RFHA1025 - 280W GaN WIDEBAND PULSED POWER AMPLIFIER (RFMD)
RFH10N45 - N-Channel Power MOSFET (Intersil Corporation)
RFH10N50 - N-Channel Power MOSFET (Intersil Corporation)
RFH12N35 - N-Channel Power MOSFET (Intersil Corporation)
RFH12N40 - N-Channel Power MOSFET (Intersil Corporation)
RFH25P08 - P-Channel Power MOSFET (Intersil Corporation)
RFH25P08 - P-Channel Power MOSFETs (Harris)
RFH25P10 - P-Channel Power MOSFET (Intersil Corporation)

Other Datasheets by RF Micro Devices

RFHA1000 - 15W GaN WIDE-BAND POWER AMPLIFIER
RFHA1006 - 9W GaN WIDEBAND POWER AMPLIFIER
RFHA1020 - 280W GaN WIDE-BAND PULSED POWER AMPLIFIER
RFHA1023 - 225W GaN WIDE-BAND PULSED POWER AMPLIFIER

Published: Nov 1, 2012 |