RFHA1006 Datasheet | RF Micro Devices

Features - - - - VGS Pin 1 Advanced Ga N HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 225MHz to 1215MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5d Bm Gain 16d B - Power Added Efficiency 60% -40°C to 85°C Operating Temperature - - RF IN Pin 2,3 RF OUT / VDS Pin 6,7 - - GND BASE Functional Block Diagram - Product Description The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (Ga N) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RFHA1006 is an input matched Ga N transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is acplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. .Data Sheet.co.kr - Large Signal Models Available Applications - Class AB Operation for Public Mobile Radio Power Amplifier Stage for mercial Wireless Infrastructure General Purpose Tx Amplification Test Instrumentation Civilian and Military Radar - - - - Ordering Information RFHA1006S2 RFHA1006SB RFHA1006SQ RFHA1006SR RFHA1006TR7 RFHA1006PCBA-410 2-Piece sample bag 5-Piece bag 25-Piece bag 100 Pieces on 7” short reel 750 Pieces on 7” reel Fully assembled evaluation board 225MHz to 1215MHz; 28V operation Optimum Technology Matching® Applied Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT - Ga N HEMT Bi FET...