SPA2318Z Datasheet - RF Micro Devices

POWER AMPLIFIER

SPA2318Z Features

* High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel Power at -50dBc ACP; +47dBm Typ. OIP3

* On-Chip Active Bias Control

* High Gain: 24dB Typ. at 1960 MHz

* Patented High Reliability GaAs HBT Technology

* Surface-Mountable Plastic Packag

SPA2318Z General Description

RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer t.

SPA2318Z Datasheet (382.52 KB)

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Datasheet Details

Part number:

SPA2318Z

Manufacturer:

RF Micro Devices

File Size:

382.52 KB

Description:

Power amplifier.
SPA2318ZLow Noise, High Gain SiGe HBT SPA2318Z 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Descriptio.

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SPA2318Z POWER AMPLIFIER RF Micro Devices

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SPA2318Z Features

SPA2318Z General Description

Datasheet Details

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