SPA2318Z
SPA2318Z is POWER AMPLIFIER manufactured by RF Micro Devices.
SPA2318ZLow Noise, High Gain SiGe HBT
1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS
Package: Exposed Pad SOIC-8
Product Description
RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960MHz and 2140MHz bands. Its high linearity makes it an ideal choice for multi-carrier and digital applications....
