SPA2318Z - POWER AMPLIFIER

Description

amplifier housed in a low-cost surface-mountable plastic package.

Features

High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel Power at -50dBc ACP; +47dBm Typ. OIP3.
On-Chip Active Bias Control.
High Gain: 24dB Typ. at 1960 MHz.
Patented High Reliability GaAs HBT Technology.
Surface-Mountable Plastic Package.

RF Micro Devices

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Datasheet Details

Part number	SPA2318Z
Manufacturer	RF Micro Devices
File Size	382.52 KB
Description	POWER AMPLIFIER
Datasheet	SPA2318Z Datasheet
Additional preview pages of the SPA2318Z datasheet.

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Full PDF Text Transcription

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SPA2318ZLow Noise, High Gain SiGe HBT SPA2318Z 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960MHz and 2140MHz bands. Its high linearity makes it an ideal choice for multi-carrier and digital applications.

Published: Apr 1, 2016 |