SPA20N60C3 Datasheet - INCHANGE

SPA20N60C3, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* New revolutionary high voltage technology
* Ultra low gate charge
* High peak current capability
* Improved transconductance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor SPA20N60C3
* APPLI

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 20.7 13.1 62.1 PD Total Dissipation 34.5 Tj Operating Junction

SPA20N60C3-INCHANGE.pdf