900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






RF Micro Devices

SXA-389Z Datasheet Preview

SXA-389Z Datasheet

MEDIUM POWER GaAs HBT AMPLIFIER

No Preview Available !

SXA-389(Z)
400MHz to
2500 MHz
¼W Medium
Power GaAs
HBT Amplifier
with Active
Bias
SXA-389(Z)
400MHz to 2500MHz ¼W MEDIUM POWER
GaAs HBT AMPLIFIER WITH ACTIVE BIAS
Package: SOT-89
Product Description
RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipo-
lar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent performance
from wafer to wafer and lot to lot. These amplifiers are specially designed
for use as driver devices for infrastructure equipment in the 400MHz
to2500MHz cellular, ISM, WLL, PCS, W-CDMA applications.
Optimum Technology
Matching® Applied
9 GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Typical IP3, P1dB, Gain
50
45 OIP3
P1dB
40 Gain
35
30
25
20
15
10
5
0
850 MHz
1960 MHz
2140 MHz
2450 MHz
Features
„ Available in RFMD Green, RoHS
Compliant, and Pb-Free (Z Part
Number)
„ On-Chip Active Bias Control, Sin-
gle 5V Supply
„ High Output 3rd Order
Intercept:+42to+44dBm Typ.
„ High P1dB :+25dBm Typ.
„ High Gain:+19dB at 850MHz
„ High Efficiency: Consumes Only
600 mW
„ Patented High Reliability GaAs
HBT Technology
„ Surface-Mountable Power Plastic
Package
Applications
„ W-CDMA, PCS, Cellular Systems
„ High Linearity IF Amplifiers
„ Multi-Carrier Applications
Parameter
Small Signal Gain
Output Power at 1dB Compression
Output Third Order Intercept Point
Noise Figure
Input VSWR
Device Operating Current
Operating Dissipated Power
Thermal Resistance
Test Conditions: Z0=50Ω, TA=25°C
Min.
12.5
24.0
39.0
90.0
Specification
Typ.
19.0
14.0
13.5
13.0
25.0
25.0
25.0
25.0
43.0
44.0
42.0
42.0
4.7
5.5
6.0
6.0
1.3:1
1.4:1
1.3:1
1.1:1
115.0
575.0
100
Max.
15.0
122.0
610.0
Unit
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
mA
mW
°C/W
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
VCC = 5 V
Condition
junction to backside
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-102231 Rev F
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 10




RF Micro Devices

SXA-389Z Datasheet Preview

SXA-389Z Datasheet

MEDIUM POWER GaAs HBT AMPLIFIER

No Preview Available !

SXA-389(Z)
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (lD)
Max Device Voltage (VD)
Max RF Input Power
240 mA
6V
100 mW
Max Dissipated Power
1500
mW
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temperature
165
-40 to + 85
150
°C
°C
°C
ESD 1B Class
Moisture Sensitivity Level
MSL 2
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on
page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Recommended Mounting Configuration for
Optimum RF and Thermal Performance
Ground Plane
Plated Thru
Holes
(0.020" DIA)
SXA-389B
Machine
Screws
(Optional)
2 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-102231 Rev F


Part Number SXA-389Z
Description MEDIUM POWER GaAs HBT AMPLIFIER
Maker RF Micro Devices
Total Page 10 Pages
PDF Download

SXA-389Z Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SXA-389 Medium Power GaAs HBT Amplifier
Sirenza Microdevices
2 SXA-389 MEDIUM POWER GaAs HBT AMPLIFIER
RF Micro Devices
3 SXA-389B Medium Power GaAs HBT Amplifier
Sirenza Microdevices
4 SXA-389BZ Medium Power GaAs HBT Amplifier
Sirenza Microdevices
5 SXA-389Z Medium Power GaAs HBT Amplifier
Sirenza Microdevices
6 SXA-389Z MEDIUM POWER GaAs HBT AMPLIFIER
RF Micro Devices





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy