SXA-389Z Datasheet | RF Micro Devices

Description RFMD’s SXA-389 amplifier is a high efficiency Ga As Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400MHz to2500MHz cellular, ISM, WLL, PCS, W-CDMA applications. Optimum Technology Matching® Applied 9 Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT In P HBT RF MEMS LDMOS d Bm Typical IP3, P1d B, Gain 45 OIP3 P1d B 40 Gain 35 0 850 MHz 1960 MHz 2140 MHz 2450 MHz Features - Available in RFMD Green, Ro HS pliant, and Pb-Free (Z Part Number) - On-Chip Active Bias Control, Single 5V Supply - High Output 3rd Order Intercept:+42to+44d Bm Typ. - High P1d B :+25d Bm Typ. - High Gain:+19d B at 850MHz - High Efficiency: Consumes Only 600 m W - Patented High Reliability Ga As HBT Technology - Surface-Mountable Power Plastic Package Applications - W-CDMA, PCS, Cellular Systems - High Linearity IF Amplifiers - Multi-Carrier Applications Parameter Small Signal Gain Output Power at 1d B pression Output Third Order Intercept Point Noise...