MG7213WZ
MG7213WZ is 1200V 75A Insulated Gate Bipolar Transistor manufactured by ROHM.
Features
1) Trench Light Punch Through Type 2) Low Collector
- Emitter Saturation Voltage 3) Short Circuit Withstand Time 10μs
- Outline
Wafer
- Inner Circuit
(2) (1)
(3)
- Application General Inverter for Industrial Use
(1) Gate (2) Collector (3) Emitter
- Absolute Maximum Ratings Parameter
Collector
- Emitter Voltage, Tj = 25°C Gate
- Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature
- 1 Depending on thermal properties of assembly
- 2 Pulse width limited by Tjmax.
Symbol VCES VGES IC- 1 ICP- 2 Tj
Value
Unit
±30
- 1)
-40 to +175
°C
.rohm.
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1/3
- Rev.A
- Design Assurance
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Short Circuit Withstand Time
VCC ≦ 600V, tsc- 3 VGE = 15V,
Tj =...