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Rohm Semiconductor Electronic Components Datasheet

R6006JND3 Datasheet

Power MOSFET

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R6006JND3
  Nch 600V 6A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
600V
0.936Ω
±6A
86W
lFeatures
1) Fast reverse recovery time (trr)
2) Low on-resistance
3) Fast switching speed
4) Drive circuits can be simple
5) Pb-free plating ; RoHS compliant
lOutline
TO-252
 
 
 
 
      
lInner circuit
   Datasheet
 
lApplication
Switching
lPackaging specifications
Packing
Embossed Tape
Packing code
TL1
Marking
R6006JND3
Quantity (pcs)
2500
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
600
V
Continuous drain current (Tc = 25°C)
ID*1
±6
A
Pulsed drain current
IDP*2
±18
A
Gate - Source voltage
VGSS
±30
V
Avalanche current, single pulse
IAS*3
1.50
A
Avalanche energy, single pulse
EAS*3
117
mJ
Power dissipation (Tc = 25°C)
PD
86
W
Junction temperature
Tj
150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
                                                                                        
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190527 - Rev.002


Rohm Semiconductor Electronic Components Datasheet

R6006JND3 Datasheet

Power MOSFET

No Preview Available !

R6006JND3
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
 
                  
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
-
- 1.45 /W
-
- 100 /W
-
- 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V
IDSS
Tj = 25°C
IGSS VGS = ±30V, VDS = 0V
VGS(th) VDS = VGS, ID = 0.8mA
RDS(on)*5 VGS = 15V, ID = 3.0A
Tj = 25°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
600 -
-
V
-
- 100 μA
-
- ±100 nA
5.0 6.0 7.0 V
- 0.720 0.936 Ω
- 3.1 - Ω
                                                                                         
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20190527 - Rev.002


Part Number R6006JND3
Description Power MOSFET
Maker ROHM
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R6006JND3 Datasheet PDF






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