R6010MNX
Nch 600V 10A Power MOSFET
Datasheet l Outline
VDSS
600V r RDS(on)(Max.)
0.380Ω
±10A
TO-220FM fo PD
56W
d l Features e 1) Fast reverse recovery time (trr). d 2) Low on-resistance. n s 3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to e n be ±30V.
5) Drive circuits can be simple. m sig 6) Pb-free plating ; Ro HS pliant l Inner circuit l Packaging specifications Packing m e Reel size (mm) o l Application D Switching Power Supply
Tape width (mm) Type
Basic ordering unit (pcs) c Taping code e w Marking
R e l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value t N Drain
- Source voltage o Continuous drain current (Tc = 25°C) NPulsed drain current
VDSS
ID- 1
±10
IDP- 2
±30
Bulk
- 500
- R6010MNX Unit V A A
Gate
- Source voltage
VGSS
±30
Avalanche current, single pulse
Avalanche energy, single pulse
EAS- 3
0.6 m...
