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Rohm Semiconductor Electronic Components Datasheet

R6012JNX Datasheet

Nch 600V 12A Power MOSFET

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R6012JNX
  Nch 600V 12A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
600V
0.390Ω
±12A
60W
lFeatures
1) Fast reverse recovery time (trr)
2) Low on-resistance
3) Fast switching speed
4) Drive circuits can be simple
5) Pb-free plating ; RoHS compliant
lOutline
TO-220FM
 
 
 
 
      
lInner circuit
 
lApplication
Switching applications
lPackaging specifications
Packing
Tube
Packing code
C7 G
Marking
R6012JNX
Basic ordering unit (pcs)
2000
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±12 A
Pulsed drain current
IDP*2 ±36 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS*3 2.9 A
Avalanche energy, single pulse
EAS*3
327 mJ
Power dissipation (Tc = 25°C)
PD 60 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
                                                                                        
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190111 - Rev.002


Rohm Semiconductor Electronic Components Datasheet

R6012JNX Datasheet

Nch 600V 12A Power MOSFET

No Preview Available !

R6012JNX
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
                    
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 2.07 /W
- - 70 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V
IDSS
Tj = 25°C
IGSS VGS = ±30V, VDS = 0V
VGS(th) VDS = VGS, ID = 2.5mA
RDS(on)*5 VGS = 15V, ID = 6.0A
Tj = 25°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
- - 100 μA
- - ±100 nA
5.0 6.0 7.0 V
- 0.300 0.390 Ω
- 2.2 - Ω
                                                                                         
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20190111 - Rev.002


Part Number R6012JNX
Description Nch 600V 12A Power MOSFET
Maker ROHM
Total Page 15 Pages
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